IRGS30B60K |
RFQ for IRGS30B60K Required Field |
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| Technical/Catalog Information | IRGS30B60KPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 78A |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 30A |
| Power - Max | 370W |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGS30B60KPBF IRGS30B60KPBF |
| Product | Manufacturers | Pack | D/C |
| IRGS30B60K | - | TO | - |
Features |
| • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Maximum Junction Temperature rated at 175°C. |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25°C | Continuous Collector Current | 78 | A |
| IC @ TC = 100°C | Continuous Collector Current | 50 | |
| ICM | Pulse Collector Current(Ref.Fig.C.T.5) | 120 | |
| ILM | Clamped Inductive Load current | 120 | |
| VISOL | RMS Isolation Voltage, Terminal to Case, t=1 min. | 2500 | V |
| VGE | Gate-to-Emitter Voltage | ±20 | |
| PD @ TC = 25°C | Maximum Power Dissipation | 370 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 180 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range | -55 to +175 | °C |
| Soldering Temperature, for 10 sec. | 300(0.063 in.(1.6mm)fromcase) | ||
| Mounting Torque, 6-32 or M3 Screw | 10 lbf`in (1.1 N`m) |
